New transistors will increase the range of electric vehicles

New transistors will increase the range of electric vehicles

June 5, 2020 0 By autotimesnews

Scientists from the United States have proposed a new type of MOS transistor that can withstand extremely high voltage, while maintaining a minimum thickness. The use of such devices in the automotive industry would improve the efficiency of electric vehicles.

Field-effect transistors with an insulated gate, they are also MOS transistors are widespread in electronics, especially in the automotive industry. They have a high input impedance and serve as an amplifier or signal rectifier. About 50 billion of these devices are manufactured per year.

Having developed a gallium oxide-based MOS transistor, experts at the University of Buffalo understood how to control very high voltage with paper-thin devices. As a result of passivation of the transistor with a layer of epoxy polymer SU-8, he was able to withstand 8000 volts. Scientists claim that it is much higher than similar transistors made of silicon carbide or gallium nitride.

The key quality of gallium oxide is the impressive 4.8 electron-volt band gap. This indicator indicates how much energy is required to push an electron into a conducting state, writes New Atlas. The wider the area, the better. The band gap of silicon, the most common material, is 1.1 eV. Silicon carbide and gallium nitride have 3.4 and 3.3 electron volts, respectively.

Thus, the new gallium oxide MOSFETs will make it possible to manufacture smaller electronic devices with greater productivity. And perfect for electric vehicles, as well as locomotives, airplanes or power plants.

A record transistor made of gallium nitride was developed last year in the United States. It has outstanding features – a record low leakage current, a record high gain and a record high current gain cutoff frequency.